Title :
Transient Device Simulation of Floating Gate Nonvolatile Memory Cell With a Local Trap
Author :
Watanabe, Hiroshi
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
The single-electron general-purpose device simulator is improved to carry out a wide-range transient analysis from 1 ps to 10 years. We apply this simulator to a floating gate (FG) nonvolatile memory cell in order to simulate a degradation mode of data retention owing to the direct tunneling enhanced by the fixed charge stored by a local trap in an interpoly dielectric. The scaling impact of ideal high-K interpoly dielectric FG nonvolatile memory cell is also investigated.
Keywords :
random-access storage; transient analysis; data retention; degradation mode; direct tunneling; high-if interpoly dielectric floating gate nonvolatile memory cell; local trap; single-electron general-purpose device simulator; time 1 ps to 10 year; transient device simulation; Analytical models; Degradation; Dielectric substrates; Electron traps; High K dielectric materials; Leakage current; Nonvolatile memory; Silicon compounds; Transient analysis; Tunneling; Coulomb oscillation; TCAD; device modeling; device simulation; floating gate (FG); local trap; memory; modeling; single-electron sensitivity; trap-assisted tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2051248
