DocumentCode :
1515556
Title :
A simple diode model with reverse recovery
Author :
Lauritzen, Peter O. ; Ma, Cliff L.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Volume :
6
Issue :
2
fYear :
1991
fDate :
4/1/1991 12:00:00 AM
Firstpage :
188
Lastpage :
191
Abstract :
The basic diode charge-control model used in SPICE is extended to include reverse recovery. The model is derived from the semiconductor charge transport equations. The diode charge transport equations are simplified using the lumped charged concept of Linvill, and the model is demonstrated on the Saber simulator for simple inductive and resistive load circuits. The two model parameters, diode lifetime and diffusion transit time, can easily be determined from a switching waveform
Keywords :
digital simulation; electronic engineering computing; semiconductor device models; semiconductor diodes; software packages; SPICE; Saber simulator; charge transport equations; diffusion transit time; diode charge-control model; inductive load; lifetime; lumped charged concept; resistive load; reverse recovery; semiconductor device models; software packages; Capacitance; Capacitors; Charge carrier processes; Circuit simulation; Energy storage; Helium; P-i-n diodes; Power dissipation; SPICE; Voltage;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/63.76804
Filename :
76804
Link To Document :
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