Title :
An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT)
Author :
Hefner, Allen R., Jr.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
The drive circuit requirements of the insulated gate bipolar transistor (IGBT) are explained with the aid of an analytical model. It is shown that nonquasi-static effects limit the influence of the drive circuit on the time rate-of-change of anode voltage. Model results are compared with measured turn-on and turn-off waveforms for different drive, load, and feedback circuits, and for different IGBT base lifetimes
Keywords :
driver circuits; insulated gate bipolar transistors; power transistors; semiconductor device models; IGBT; analytical model; anode voltage; base lifetimes; feedback; load; nonquasi-static effects; power insulated gate bipolar transistor; semiconductor device models; turn-off; turn-on; Analytical models; Anodes; Bipolar transistors; Capacitance; Cathodes; Feedback circuits; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Voltage;
Journal_Title :
Power Electronics, IEEE Transactions on
