• DocumentCode
    1515585
  • Title

    Thermal parameter estimation using recursive identification

  • Author

    Skibinski, Gary L. ; Sethares, William A.

  • Author_Institution
    Wisconsin Univ., Madison, WI, USA
  • Volume
    6
  • Issue
    2
  • fYear
    1991
  • fDate
    4/1/1991 12:00:00 AM
  • Firstpage
    228
  • Lastpage
    239
  • Abstract
    A novel method that converts a semiconductor transient thermal impedance curve (TTIC) into an equivalent thermal RC network model is presented. Thermal resistance (R) and thermal capacitance (C) parameters of the model are identified using manufacturer´s data and offline recursive least square techniques. Relevant estimation theory concepts and the formulation of an appropriate model for the identification process are given. Model synthesis is illustrated using an isolated base power transistor module. The application of time decoupled theory for high order thermal models is outlined. Simulation of junction temperature responses using model and manufacturer TTICs are compared. Estimated parameter validity is further confirmed by parameter calculation obtained from module physical dimensions
  • Keywords
    parameter estimation; power transistors; semiconductor device models; thermal analysis; equivalent thermal RC network; isolated base power transistor; junction temperature responses; recursive identification; recursive least square techniques; semiconductor device models; thermal capacitance; thermal parameter estimation; thermal resistance; time decoupled theory; transient thermal impedance curve; Capacitance; Estimation theory; Impedance; Least squares methods; Parameter estimation; Power transistors; Semiconductor device manufacture; Temperature; Thermal resistance; Virtual manufacturing;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/63.76809
  • Filename
    76809