Title :
3-D Wafer-Level Packaging Die Stacking Using Spin-on-Dielectric Polymer Liner Through-Silicon Vias
Author :
Civale, Yann ; Tezcan, Deniz Sabuncuoglu ; Philipsen, Harold G G ; Duval, Fabrice F C ; Jaenen, Patrick ; Travaly, Youssef ; Soussan, Philippe ; Swinnen, Bart ; Beyne, Eric
Author_Institution :
Interconnect & Packaging Dept., Interuniversity Microelectron. Center, Leuven, Belgium
fDate :
6/1/2011 12:00:00 AM
Abstract :
In this paper, we report on the processing and the electrical characterization of a 3-D-wafer level packaging through-silicon-via (TSV) flow, using a polymer-isolated, Cu-filled TSV, realized on thinned wafers bonded to temporary carriers. A Cu/Sn micro-bump structure is integrated in the TSV process flow and used for realizing a two-die stack. Before TSV processing, the Si wafers are bonded to temporary carriers and thinned down to 50 μm. The actual TSV and micro-bump process uses 3 masks, two Si-deep-reactive ion etching steps and a polymer liner as a dielectric. The dimensions of the TSV structure are: 35 μm ØTSV, 5 μm thick polymer liner, 25-μm-Ø Cu TSV, 50 μm deep TSV, and a 60 μm TSV pitch.
Keywords :
dielectric materials; integrated circuit interconnections; masks; polymers; sputter etching; three-dimensional integrated circuits; wafer level packaging; 3D wafer-level packaging; Cu-Sn; Cu-filled TSV; Si; TSV pitch; TSV process flow; deep-reactive ion etching; die stacking; electrical characterization; integrated circuit fabrication; integrated circuit interconnections; integrated circuit packaging; mask; microbump process; microbump structure; polymer-isolated TSV; size 50 mum; spin-on-dielectric polymer liner; thinned wafer; through-silicon vias; two-die stack; Copper; Dielectrics; Electrical resistance measurement; Polymers; Resistance; Silicon; Through-silicon vias; Integrated circuit fabrication; integrated circuit interconnections; integrated circuit packaging; integrated circuits; packaging;
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCPMT.2011.2125791
