A 60 GHz Broadband Stacked FET Power Amplifier Using 130 nm Metamorphic HEMTs

Author

Kim, Youngmin ; Koh, Yumin ; Kim, Jihoon ; Lee, Seokchul ; Jeong, Jinho ; Seo, Kwangseok ; Kwon, Youngwoo

Author_Institution

Inst. of New Media & Commun., Seoul Nat. Univ., Seoul, South Korea

Volume

21

Issue

6

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

323

Lastpage

325

Abstract

A V-band monolithic microwave integrated circuit power amplifier (PA) using metamorphic high electron mobility transistors (mHEMTs) is developed using a stacked-FET structure. Design methodology to optimize the series power combining power amplifiers at millimeter-waves is also presented. The fabricated PA using triple-stacked 130 nm mHEMTs shows a gain of 16 dB and a saturated output power of 20 dBm with a power added efficiency of 19% at 59 GHz. The 3 dB output power bandwidth is as wide as 15 GHz.

Keywords

MMIC amplifiers; high electron mobility transistors; microwave integrated circuits; millimetre wave amplifiers; power amplifiers; V-band monolithic microwave integrated circuit; broadband stacked FET; design methodology; frequency 15 GHz; frequency 59 GHz; frequency 60 GHz; gain 16 dB; metamorphic HEMT; metamorphic high electron mobility transistor; power amplifier; size 130 nm; stacked-FET structure; Bandwidth; FETs; Impedance; Logic gates; Mathematical model; Power generation; FET; Metamorphic high electron mobility transistor (mHEMT); V-band; power amplifier (PA);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2011.2140096

Filename

5766785