DocumentCode :
1516091
Title :
Effect of Annealing Temperature on 
-Based Thin-Film-Transistor Performance
Author :
Zhong, Ni ; Cao, Jun Jun ; Shima, Hisashi ; Akinaga, Hiro
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Volume :
33
Issue :
7
fYear :
2012
fDate :
7/1/2012 12:00:00 AM
Firstpage :
1009
Lastpage :
1011
Abstract :
TiOx thin-film transistors (TFTs) are fabricated using SiO2 as gate dielectrics. The enhancement of the electric characteristics is observed after a postannealing processing including the reduction of the threshold voltage Vth, the increase in mobility μ, and the on/off ratio. The effect of the postannealing temperature on both the TiOx/SiO2 interfacial bonding structure and the TiOx crystallinity is investigated. We suggest that the interfacial modification at the TiOx/SiO2 interface contributes to the significant reduction of Vth due to the breaking of Si-O-Ti bonding. The improvement of the TiOx crystallinity and interfacial structure leads to the increase in μ and in the on/off ratio. The low-temperature annealing treatment at 200 °C is very effective to improve the TiOx/SiO2 interface structure.
Keywords :
annealing; dielectric materials; silicon compounds; thin film transistors; titanium compounds; Si-O-Ti; TFT; TiO2; TiOx-SiO2; crystallinity; electric characteristic enhancement; gate dielectrics; interfacial bonding structure; interfacial modification; interfacial structure; low-temperature annealing treatment; on-off ratio; post annealing processing; temperature 200 degC; thin-film-transistor performance; threshold voltage reduction; Annealing; Bonding; Logic gates; Temperature; Thin film transistors; Vibrations; Annealing; semiconductor–insulator interfaces; thin-film transistors (TFTs); titanium oxide $(hbox{TiO}_{2})$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2193658
Filename :
6199956
Link To Document :
