Title :
A dual-band RF front-end for WCDMA and GSM applications
Author :
Ryynänen, Jussi ; Kivekäs, Kalle ; Jussila, Jarkko ; Pärssinen, Aarno ; Halonen, Kari A I
Author_Institution :
Helsinki Univ. of Technol., Electron. Circuit Design Lab., Finland
fDate :
8/1/2001 12:00:00 AM
Abstract :
An RF front-end for dual-band dual-mode operation is presented. The front-end consumes 22.5 mW from a 1.8-V supply and is designed to be used in a direct-conversion WCDMA and GSM receiver. The front-end has been fabricated in a 0.35-μm BiCMOS process and, in both modes, can use the same devices in the signal path except the LNA input transistors. The front-end has a 27-dB gain control range, which is divided between the LNA and quadrature mixers. The measured double-sideband noise figure and voltage gain are 2.3 dB, 39.5 dB, for the GSM and 4.3 dB, 33 dB for the WCDMA, respectively. The linearity parameters IIP3 and IIP2 are -19 dBm, +35 dBm for the GSM and -14.5 dBm and +34 dBm for the WCDMA, respectively
Keywords :
BiCMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; UHF mixers; cellular radio; code division multiple access; low-power electronics; radio receivers; 1.8 V; 22.5 mW; BiCMOS process; GSM receiver; LNA; balun; current boosting; direct-conversion WCDMA receiver; double-sideband noise figure; dual-band RF frontend; dual-band dual-mode operation; linearity parameters; quadrature mixers; voltage gain; BiCMOS integrated circuits; Dual band; GSM; Gain control; Gain measurement; Multiaccess communication; Noise figure; Noise measurement; Radio frequency; Signal processing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
