Measurements of the polarization dependence of the gain of strained multiple quantum well InGaAs-InP lasers

Author

Tanbun-Ek, T. ; Olsson, N.A. ; Logan, R.A. ; Wecht, K.W. ; Sergent, A.M.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

3

Issue

2

fYear

1991

Firstpage

103

Lastpage

105

Abstract

The polarization-dependent gain spectra of both tensile and compressive strain multiple-quantum-well (MQW) In/sub x/Ga/sub 1-x/As-InP lasers in a relatively large strain regime are presented. The results show that MQW lasers with tensile strain and an In concentration as low as 43% in the wells lase in a pure transverse magnetic (TM) mode rather than a transverse electric (TE) mode with a gain difference of 60-70 cm/sup -1/ at all the injection currents investigated. The peak gain for the TE mode is shifted toward shorter wavelengths from that of the TM mode, indicating that the emission is principally due to light hole-electron transition. The differential gain of the TM mode is about 1.5 times higher than that of the TE mode operation. Opposite phenomena were observed in the compressive strained MQW lasers.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; light polarisation; semiconductor junction lasers; In concentration; MQW lasers; compressive strain; differential gain; diode laser gain polarisation dependence measurement; gain spectra; injection currents; light hole-electron transition; peak gain; pure TM mode lasing; semiconductor; strained multiple quantum well InGaAs-InP lasers; tensile strain; Gain measurement; Laser modes; Laser transitions; Optical polarization; Power lasers; Quantum well devices; Quantum well lasers; Strain measurement; Tellurium; Tensile strain;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.76854

Filename

76854