Intermodulation distortion in a multiple-quantum-well semiconductor optical amplifier

Author

Chung, Y.C. ; Wiesenfeld, J.M. ; Raybon, G. ; Koren, U. ; Twu, Y.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

3

Issue

2

fYear

1991

Firstpage

130

Lastpage

132

Abstract

The measurement of intermodulation distortion (IMD) induced by carrier-density modulation in a multiple-quantum-well (MQW) semiconductor amplifier is reported. The results show that MQW amplifiers have 15 dB less IMD than conventional buried-heterostructure semiconductor amplifiers. The IMD is dependent on the output power of the amplifiers, which confirms that the carrier-density modulation is the dominant nonlinear mechanism in MQW amplifiers. In addition, the results show that, unlike conventional buried-heterostructure amplifiers, MQW amplifiers have at least two time constants (200-250 ps and <10 ps) for the gain recovery process.<>

Keywords

intermodulation; laser variables measurement; optical modulation; semiconductor junction lasers; 10 ps; 200 ps; 250 ps; carrier-density modulation; dominant nonlinear mechanism; gain recovery process; intermodulation distortion; multiple-quantum-well; output power; semiconductor optical amplifier; time constants; Intermodulation distortion; Nonlinear optics; Optical amplifiers; Optical distortion; Optical refraction; Optical saturation; Power amplifiers; Quantum well devices; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.76864

Filename

76864