Title :
High-power 980-nm AlGaAs/InGaAs strained quantum-well laser grown by OMVPE
Author :
Chen, Y.K. ; Wu, M.C. ; Hobson, W.S. ; Pearton, S.J. ; Sergent, A.M. ; Chin, M.A.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
5/1/1991 12:00:00 AM
Abstract :
High-power lattice-strained AlGaAs/InGaAs graded index separate-confinement heterostructure (GRINSCH) quantum-well lasers emitting at a 980-nm wavelength have been grown by organometallic vapor phase epitaxy (OMVPE) and fabricated with a self-aligned ridge-waveguide structure. Using a 3- mu m-wide and 750- mu m-long AR-HR coated laser, 30 mV of optical power was coupled into optical fibers with 28.6% efficiency. A dominating single-lobe far-field radiation pattern was obtained from a wedge-shaped ridge-waveguide laser for output power as high as 240 mW with a maximum output power of 310 mW.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; indium compounds; laser transitions; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 240 mW; 310 mW; 980 nm; III-V semiconductors; efficiency; lattice strained AlGaAs-InGaAs graded index separate confinement heterostructure quantum well lasers; optical fibers; optical power; organometallic vapor phase epitaxy; output power; self-aligned ridge-waveguide structure; single-lobe far-field radiation pattern; wedge-shaped ridge-waveguide laser; Erbium-doped fiber lasers; Gallium arsenide; Indium gallium arsenide; Laser modes; Optical coupling; Optical fibers; Power generation; Power lasers; Quantum well lasers; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
