Title :
Dark-line-resistant diode laser at 0.8 mu m comprising InAlGaAs strained quantum well
Author :
Waters, R.G. ; Dalby, R.J. ; Baumann, J.A. ; De Sanctis, J.L. ; Shepard, A.H.
Author_Institution :
McDonnell Douglas Electron. Syst. Co., Elmsford, NY, USA
fDate :
5/1/1991 12:00:00 AM
Abstract :
Quantum-well lasers emitting at 0.8 mu m and resistant to
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; laser transitions; semiconductor junction lasers; semiconductor quantum wells; 0.8 micron; III-V semiconductor; InAlGaAs strained quantum well; dark-line propagation; diode laser; quantum-well lasers; reliability-enhanced diode pump sources; Aluminum; Diode lasers; Gallium arsenide; Indium gallium arsenide; Laser modes; Lattices; MOCVD; Pump lasers; Quantum well lasers; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
