Beam properties of AlGaAs power lasers with high-quality etched mirrors

Author

Bona, G.L. ; Buchmann, P. ; Clauberg, R. ; Jaeckel, H. ; Vettiger, P. ; Voegeli, O. ; Webb, D.J.

Author_Institution

IBM Res. Div., Ruschlikon, Switzerland

Volume

3

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

412

Lastpage

414

Abstract

High-quality etched mirrors for AlGaAs/GaAs power lasers for applications in optical storage have been fabricated by chemically assisted ion-beam etching (CAIBE). In order to ensure flat mirror facets of the ridge-waveguide lasers, a flared-waveguide end section is used. This results in a very slight mirror roughness of approximately 20 nm across the beam cross section, and yields excellent beam properties allowing diffraction-limited focusing up to 50-mW output power.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser accessories; mirrors; optical workshop techniques; semiconductor junction lasers; sputter etching; 50 mW; AlGaAs-GaAs; AlGaAs-GaAs power lasers; III-V semiconductors; beam cross section; beam properties; chemically assisted ion-beam etching; diffraction-limited focusing; flared-waveguide end section; flat mirror facets; high-quality etched mirrors; mirror roughness; optical storage; output power; ridge-waveguide lasers; Chemical lasers; Etching; Gallium arsenide; Geometrical optics; Laser beams; Laser modes; Mirrors; Optical devices; Optical waveguides; Power lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.93862

Filename

93862