Variation of frequency chirp with wavelength in an InGaAsP/InP multiple-quantum-well (MQW) waveguide electroabsorption modulator

Author

Whalen, M.S. ; Wood, T.H. ; Miller, B.I. ; Koren, U. ; Burrus, C.A. ; Raybon, G.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

3

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

451

Lastpage

452

Abstract

Through measurements of the modulation index and the optical power spectra, the chirp parameter for an InGaAsP quantum-well electroabsorption waveguide modulator has been determined. The result shows that the frequency chirp parameter achieves a minimum value of 0.6 in the wavelength range 1509-1545 nm. This is significantly less than what is obtained from direct intensity modulation of injection lasers, making this a useful device in high-bit-rate, long-haul systems.<>

Keywords

III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; gallium compounds; indium compounds; optical modulation; optical waveguides; semiconductor quantum wells; 1509 to 1545 nm; InGaAsP-InP; MQW; chirp parameter; frequency chirp; high-bit-rate; long-haul systems; modulation index; multiple-quantum-well; optical power spectra; semiconductors; waveguide electroabsorption modulator; Chirp modulation; Frequency; Indium phosphide; Intensity modulation; Optical modulation; Optical waveguides; Power measurement; Quantum well devices; Quantum well lasers; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.93875

Filename

93875