High-power operation of AlGaAs SQW-SCH broad-area laser diodes for Nd:YAG solid-state laser pumping

Author

Nagai, Yutaka ; Shigihara, Kimio ; Takami, Akihiro ; Karakida, Shoichi ; Kokubo, Yoshihiro ; Tada, Akiharu

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

Volume

3

Issue

2

fYear

1991

Firstpage

97

Lastpage

99

Abstract

AlGaAs single-quantum-well separate-confinement-heterostructure (SQW-SCH) single-stripe broad-area laser diodes (LDs) for Nd:YAG solid-state laser pumping were developed. The high-power operation of the SQW-SCH LD was demonstrated. The maximum output power under continuous wave operation at room temperature was 2.6 W in the range of the Nd:YAG absorption band. Stable operation was also confirmed for over 500 h under the condition of 25 degrees C at 1 W under continuous-wave operation.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; life testing; optical pumping; semiconductor device testing; semiconductor junction lasers; 1 W; 2.6 W; 25 degC; 500 hrs; AlGaAs; CW lasing; SQW-SCH broad-area laser diodes; YAG:Nd; YAl5O12:Nd; continuous wave operation; high-power; life testing; room temperature; semiconductor; separate-confinement-heterostructure; single-quantum-well; single-stripe; solid-state laser pumping; Absorption; Cities and towns; Diode lasers; Gallium arsenide; Heat sinks; Laser excitation; Power generation; Solid lasers; Temperature; Zinc;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.76872

Filename

76872