• DocumentCode
    1516721
  • Title

    40 Gbit/s transimpedance amplifier with high linearity range in 0.13 μm SiGe BiCMOS

  • Author

    Knochenhauer, C. ; Sedighi, Behnam ; Ellinger, F.

  • Author_Institution
    Dept. of Circuit Design & Network Theor., Tech. Univ. Dresden, Dresden, Germany
  • Volume
    47
  • Issue
    10
  • fYear
    2011
  • Firstpage
    605
  • Lastpage
    606
  • Abstract
    A 40 Gbit/s transimpedance amplifier (TIA) implemented in 0.13 μm SiGe BiCMOS with high linearity range is presented. The TIA features 24.2 dB (65.2 dB ) gain, a bandwidth of 34.2 GHz and a power consumption of only 80 mW from a 2.5 V supply. Total harmonic distortion is less than 5 up to an input current of 1.3 mApp.
  • Keywords
    BiCMOS analogue integrated circuits; Ge-Si alloys; harmonic distortion; operational amplifiers; semiconductor materials; BiCMOS; SiGe; bandwidth 34.2 GHz; bit rate 40 Gbit/s; current 1.3 mA; gain 24.2 dB; power consumption; size 0.13 mum; total harmonic distortion; transimpedance amplifier; voltage 2.5 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.0455
  • Filename
    5767249
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1516721