DocumentCode :
1516721
Title :
40 Gbit/s transimpedance amplifier with high linearity range in 0.13 μm SiGe BiCMOS
Author :
Knochenhauer, C. ; Sedighi, Behnam ; Ellinger, F.
Author_Institution :
Dept. of Circuit Design & Network Theor., Tech. Univ. Dresden, Dresden, Germany
Volume :
47
Issue :
10
fYear :
2011
Firstpage :
605
Lastpage :
606
Abstract :
A 40 Gbit/s transimpedance amplifier (TIA) implemented in 0.13 μm SiGe BiCMOS with high linearity range is presented. The TIA features 24.2 dB (65.2 dB ) gain, a bandwidth of 34.2 GHz and a power consumption of only 80 mW from a 2.5 V supply. Total harmonic distortion is less than 5 up to an input current of 1.3 mApp.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; harmonic distortion; operational amplifiers; semiconductor materials; BiCMOS; SiGe; bandwidth 34.2 GHz; bit rate 40 Gbit/s; current 1.3 mA; gain 24.2 dB; power consumption; size 0.13 mum; total harmonic distortion; transimpedance amplifier; voltage 2.5 V;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2011.0455
Filename :
5767249
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1516721
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