• DocumentCode
    1516771
  • Title

    X-band high power SiGe BiCMOS multi-function chip for active phased array radars

  • Author

    Jeong, Jong ; Yom, I.B.

  • Author_Institution
    RF & Satellite Payload Res. Team, Electron. & Telecommun. Res., Daejeon, South Korea
  • Volume
    47
  • Issue
    10
  • fYear
    2011
  • Firstpage
    618
  • Lastpage
    619
  • Abstract
    An X-band high power multi-function chip has been designed and fabricated using 0.25 m SiGe BiCMOS technology, for a transmit/receive (T/R) module of phased array radar systems. The high power and wideband performance was achieved by the integrated power amplifiers employing an active bias circuit and a series feedback technique. The fabricated multi-function chip with a compact size of 8.4 mm2 (3.5×2.4 mm) exhibits a transmit/receive gain of 30/20×dB and a P1dB of 18 dBm from 8 to 11 GHz.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; integrated circuit manufacture; microwave integrated circuits; phased array radar; power amplifiers; BiCMOS; SiGe; X-band high power multi-function chip; active bias circuit; frequency 8 GHz to 11 GHz; phased array radars; power amplifiers; series feedback technique; size 2.4 mm; size 3.5 mm; transmit/receive module;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.0703
  • Filename
    5767258
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1516771