Title :
An Energy Efficient
Generator With Fast Ramp-Up Time for Mobile DRAM
Author :
Kim, Kyu-Young ; Kim, Yonghwan ; Lee, Doo-Chan ; Kang, Yu-Ri ; Kim, Hoonki ; Kim, Soo-Won ; Park, Jongsun
Author_Institution :
Dept. of Electron. & Electr. Eng., Korea Univ., Seoul, South Korea
fDate :
6/1/2011 12:00:00 AM
Abstract :
An energy efficient VPP generator with fast ramp-up time for mobile DRAM is presented in this paper. Instead of using a fixed pumping clock frequency as in the conventional VPP generator, the proposed VPP generator adopts a voltage-controlled oscillator (VCO) and uses variable pumping frequencies to improve the ramp-up time as well as energy efficiency. Numerical results show that the VCO based VPP generators achieve energy savings of up to 34% with 40% improvement on ramp-up time when compared to the conventional ring oscillator (RO) based design. Our proposed VPP generator, which uses a three-stage voltage doubler as a charge pump, was implemented and fabricated in CMOS 0.13 μm process. The VPP generator chip´s core occupies 0.6 mm2 area and consumes 1162 nJ (average power of 47.8 mW during 24 μs ramp-up time) while generating 3.0 V output voltage with 1.0 nF load capacitor, 2.0 mA current load and 1.2 V supply voltage.
Keywords :
CMOS memory circuits; DRAM chips; power aware computing; voltage multipliers; voltage-controlled oscillators; CMOS process; charge pump; energy saving; fixed pumping clock frequency; load capacitor; mobile DRAM; ramp-up time; ring oscillator; voltage doubler; voltage-controlled oscillator; Charge pumps; Clocks; Energy consumption; Generators; Random access memory; Time frequency analysis; Voltage-controlled oscillators; $V_{rm PP}$ generator; Charge pump; mobile DRAM; voltage controlled oscillator; voltage doubler;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2011.2128170