Efficient simulation of millimeter-wave IMPATT oscillators by FATE, a combined time- and frequency-domain method

Author

Goeller, T. ; Schwab, M. ; Russer, P.

Author_Institution

Lehrstuhl fuer Hochfrequenztech., Tech. Univ., Munchen, Germany

Volume

1

Issue

11

fYear

1991

Firstpage

343

Lastpage

345

Abstract

The FATE method, proposed by M. Schwab (IEEE Trans. Microwave Theory and Techniques, vol.39, no.8, p.1391-402, 1991), for the determination of the periodic state in oscillators is shown to be ideally suited for the simulation of oscillators with strongly nonlinear active devices, e.g. IMPATT oscillators. Simulations of a waveguide oscillator illustrate the choice of a favorable network partition and the advantage of the bandwidth-unlimited time-domain simulation of the nonlinear subnetwork. V-band hybrid-integrated IMPATT oscillator simulation results are presented, showing agreement in output power within 4 dB over the DC current range from 100 mA to 220 mA compared to the measured levels and a time-domain simulation.<>

Keywords

IMPATT diodes; circuit analysis computing; frequency-domain analysis; hybrid integrated circuits; microwave integrated circuits; microwave oscillators; nonlinear network analysis; solid-state microwave circuits; time-domain analysis; 100 to 220 mA; DC current range; FATE method; IMPATT oscillators; V-band; bandwidth-unlimited simulation; combined method; frequency-domain method; hybrid-integrated; millimeter-wave; network partition; nonlinear active devices; nonlinear subnetwork; simulation; time-domain simulation; waveguide oscillator; Bandwidth; Diodes; Frequency; Millimeter wave technology; Oscillators; Space charge; Steady-state; Student members; Time domain analysis; Waveguide components;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.93906

Filename

93906