A Ku-band oscillator subsystem using a broadband GaAs MMIC push-pull amplifier/doubler

Author

Martin, Robert ; Ali, Fazal

Author_Institution

Pacific Monolithics, Sunnyvale, CA, USA

Volume

1

Issue

11

fYear

1991

Firstpage

348

Lastpage

350

Abstract

The design and performance results of a Ku-band voltage controlled oscillator subsystem using a broadband GaAs MMIC (monolithic microwave integrated circuit) push-pull amplifier as a frequency doubler are described. The subsystem utilizes both GaAs MMIC and Si bipolar technologies to achieve the desired performance objectives. The oscillator subsystem is tunable over the 14-18-GHz frequency range with a minimum output power of 18 dBm and a phase noise of -88 dBc/Hz at 100-kHz offset from the carrier over a 0 to +65 degrees C temperature range.<>

Keywords

III-V semiconductors; MMIC; frequency multipliers; gallium arsenide; microwave amplifiers; microwave oscillators; tuning; variable-frequency oscillators; wideband amplifiers; 0 to 65 degC; 14 to 18 GHz; GaAs; Ku-band; MMIC; SHF; Si bipolar oscillator; VCO; VFO; broadband; frequency doubler; oscillator subsystem; push-pull amplifier; voltage controlled oscillator; Broadband amplifiers; Frequency; Gallium arsenide; Integrated circuit technology; MMICs; Microwave amplifiers; Microwave integrated circuits; Microwave oscillators; Monolithic integrated circuits; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.93908

Filename

93908