DocumentCode :
1516885
Title :
A Ku-band oscillator subsystem using a broadband GaAs MMIC push-pull amplifier/doubler
Author :
Martin, Robert ; Ali, Fazal
Author_Institution :
Pacific Monolithics, Sunnyvale, CA, USA
Volume :
1
Issue :
11
fYear :
1991
Firstpage :
348
Lastpage :
350
Abstract :
The design and performance results of a Ku-band voltage controlled oscillator subsystem using a broadband GaAs MMIC (monolithic microwave integrated circuit) push-pull amplifier as a frequency doubler are described. The subsystem utilizes both GaAs MMIC and Si bipolar technologies to achieve the desired performance objectives. The oscillator subsystem is tunable over the 14-18-GHz frequency range with a minimum output power of 18 dBm and a phase noise of -88 dBc/Hz at 100-kHz offset from the carrier over a 0 to +65 degrees C temperature range.<>
Keywords :
III-V semiconductors; MMIC; frequency multipliers; gallium arsenide; microwave amplifiers; microwave oscillators; tuning; variable-frequency oscillators; wideband amplifiers; 0 to 65 degC; 14 to 18 GHz; GaAs; Ku-band; MMIC; SHF; Si bipolar oscillator; VCO; VFO; broadband; frequency doubler; oscillator subsystem; push-pull amplifier; voltage controlled oscillator; Broadband amplifiers; Frequency; Gallium arsenide; Integrated circuit technology; MMICs; Microwave amplifiers; Microwave integrated circuits; Microwave oscillators; Monolithic integrated circuits; Voltage-controlled oscillators;
fLanguage :
English
Journal_Title :
Microwave and Guided Wave Letters, IEEE
Publisher :
ieee
ISSN :
1051-8207
Type :
jour
DOI :
10.1109/75.93908
Filename :
93908
Link To Document :
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