DocumentCode
1516959
Title
Development of Engineered Sensing Membranes for Field-Effect Ion-Sensitive Devices Based on Stacked High- 
Dielectric Layers
Author
Jang, Hyun-June ; Kim, Min-Soo ; Cho, Won-Ju
Author_Institution
Dept. of Electron. Mater. Eng., Kwangwoon Univ., Seoul, South Korea
Volume
32
Issue
7
fYear
2011
fDate
7/1/2011 12:00:00 AM
Firstpage
973
Lastpage
975
Abstract
We evaluated the pH-sensing properties of engineered sensing membranes fabricated by stacking high-κ dielectric layers to improve the sensitivity and long-term stability of field-effect ion-sensitive device applications. The SiO2/HfO2/Al2O3 (OHA) stacked layer structure was proposed as an engineered sensing membrane, and the characteristics were compared with SiO2 (O) and SiO2/Si3N4 (ON) membranes. As a result, the engineered OHA sensing membrane revealed higher capacitance and better sensitivity and stability than the O and ON membranes. The electrolyte-insulator-semiconductor device with the OHA membrane exhibited a high sensitivity level of 54.4 mV/pH, a low hysteresis voltage of 14.26 mV, and a small drift rate of 2.15 mV/h. Therefore, the use of engineered OHA sensing membranes is suitable for increasing pH sensitivity and is promising for long-term stable field-effect pH sensor applications.
Keywords
chemical sensors; electrolytes; field effect devices; high-k dielectric thin films; ion sensitive field effect transistors; pH measurement; OHA stacked layer structure; SiO2-HfO2-Al2O3; electrolyte-insulator-semiconductor device; engineered sensing membranes; field-effect ion-sensitive devices; hysteresis voltage; pH sensitivity; pH-sensing properties; stacked high-K dielectric layers; voltage 14.26 mV; Aluminum oxide; Biomembranes; Capacitance; Dielectrics; Hysteresis; Sensitivity; Sensors; $hbox{SiO}_{2}hbox{/}hbox{HfO}_{2}hbox{/}hbox{Al}_{2}hbox{O}_{3}$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2139192
Filename
5767543
Link To Document