Title :
Analysis of the sign reversal of the photodetected signal response in a multielectrode semiconductor optical amplifier
Author :
Sharaiha, Ammar ; Guegan, Mikael
Author_Institution :
Lab. RES, Ecole Nat. d´´Ingenieurs de Brest, France
fDate :
8/1/2001 12:00:00 AM
Abstract :
We present a theoretical analysis and experimental results for a two-electrode (200 μm×300 μm) 1.5-μm semiconductor optical amplifier (SOA) used in photodetection. The experimental results show that at a particular operating point regarding current and optical input power, a sign reversal of the photodetected signal response, and a frequency bandwidth shape modification are obtained at the SOA front contact. These results are confirmed by simulation and explained by the developed theoretical photodetection expression obtained by small signal analysis from the rate equation
Keywords :
electrodes; infrared detectors; laser theory; semiconductor device models; semiconductor optical amplifiers; 1.5 mum; 200 mum; 300 mum; IR detectors; frequency bandwidth shape modification; multielectrode semiconductor optical amplifier; operating point; optical input power; photodetected signal response; photodetection; rate equation; sign reversal; small signal analysis; two-electrode semiconductor optical amplifier; Analytical models; Charge carrier density; Numerical models; Optical amplifiers; Photodetectors; Photonics; Reflectivity; Semiconductor optical amplifiers; Signal analysis; Stimulated emission;
Journal_Title :
Lightwave Technology, Journal of
