Title :
Chromatic Dispersion in InGaAsP Semiconductor Optical Amplifiers
Author :
Runge, Patrick ; Elschner, Robert ; Petermann, Klaus
Author_Institution :
Fachgebiet Hochfrequenztech., Tech. Univ., Berlin, Germany
fDate :
5/1/2010 12:00:00 AM
Abstract :
Chromatic dispersion for typical InGaAsP buried semiconductor optical amplifiers waveguide structures is investigated. Opposite to earlier estimations of the chromatic dispersion, we calculate a value of 30 fs/mm/nm around the band gap wavelength of 1550 nm. Moreover, the dependence of the chromatic dispersion on the carrier density and the lattice temperature is estimated. Since the mode confinement affects the composite material dispersion, the chromatic dispersion also depends on the polarization of the mode.
Keywords :
III-V semiconductors; carrier density; indium compounds; optical dispersion; optical waveguides; semiconductor optical amplifiers; InGaAsP; band gap wavelength; buried semiconductor optical amplifier waveguide structure; carrier density; chromatic dispersion; composite material dispersion; lattice temperature; mode confinement; mode polarization; semiconductor optical amplifiers; wavelength 1550 nm; Carrier confinement; Charge carrier density; Chromatic dispersion; Composite materials; Lattices; Optical waveguides; Photonic band gap; Semiconductor optical amplifiers; Semiconductor waveguides; Temperature dependence; Chromatic dispersion; InGaAsP; group velocity dispersion (GVD); refractive index; semiconductor optical amplifiers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2010.2046722
