Title :
Improvement in oxide thickness uniformity by repeated spike oxidation
Author :
Hong, Chao-Chi ; Lee, Chuang-Yuan ; Hsieh, Yuan-Long ; Liu, Chean-Chung ; Fong, I. Kong ; Hwu, Jenn-Gwo
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
8/1/2001 12:00:00 AM
Abstract :
A new repeated spike oxidation (RSO) method used in a rapid thermal processing system was proposed in this work. Simulation results predict the temperature distribution on the wafer would be improved by this RSO method. We proposed that the improvement in wafer temperature uniformity is mainly caused by self-compensation in radiation heat absorption rate. Experimental data pointed out that the new method can produce more uniform oxide thickness than the conventional one under an intentionally created nonuniform heating environment
Keywords :
oxidation; rapid thermal processing; temperature distribution; nonuniform heating; numerical simulation; oxide thickness uniformity; radiation heat absorption; rapid thermal processing; repeated spike oxidation; self-compensation; semiconductor wafer; temperature distribution; Absorption; Chaos; Heat transfer; Heating; Lamps; Oxidation; Predictive models; Rapid thermal processing; Temperature distribution; Thermal stresses;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
