Improvement in oxide thickness uniformity by repeated spike oxidation

Author

Hong, Chao-Chi ; Lee, Chuang-Yuan ; Hsieh, Yuan-Long ; Liu, Chean-Chung ; Fong, I. Kong ; Hwu, Jenn-Gwo

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

14

Issue

3

fYear

2001

fDate

8/1/2001 12:00:00 AM

Firstpage

227

Lastpage

230

Abstract

A new repeated spike oxidation (RSO) method used in a rapid thermal processing system was proposed in this work. Simulation results predict the temperature distribution on the wafer would be improved by this RSO method. We proposed that the improvement in wafer temperature uniformity is mainly caused by self-compensation in radiation heat absorption rate. Experimental data pointed out that the new method can produce more uniform oxide thickness than the conventional one under an intentionally created nonuniform heating environment

Keywords

oxidation; rapid thermal processing; temperature distribution; nonuniform heating; numerical simulation; oxide thickness uniformity; radiation heat absorption; rapid thermal processing; repeated spike oxidation; self-compensation; semiconductor wafer; temperature distribution; Absorption; Chaos; Heat transfer; Heating; Lamps; Oxidation; Predictive models; Rapid thermal processing; Temperature distribution; Thermal stresses;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.939819

Filename

939819