DocumentCode :
1517541
Title :
Optical Gain in GaInNAs and GaInNAsSb Quantum Wells
Author :
Ferguson, James W. ; Blood, Peter ; Smowton, Peter M. ; Bae, Hopil ; Sarmiento, Tomas ; Harris, James S. ; Tansu, Nelson ; Mawst, Luke J.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
Volume :
47
Issue :
6
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
870
Lastpage :
877
Abstract :
We have measured the absorption, gain and spontaneous emission spectra of GalnNAsSb (3.3%N), GalnNAs (0.5%N) and GalnAs quantum well structures to compare their merits as laser gain media. The parameters describing the relations between peak gain and current provide only limited insight. From the analysis of absorption spectra we have determined the intrinsic properties of the structures, represented by the product [reduced density of states × matrix element × overlap integral], taking account of differences in operating wavelength, well width and confinement. We find only a small variation in this product across the samples. The GalnNAsSb structure has a low radiative recombination current due in part to its low photon energy and also to differences in conduction and valence band densities of states and less inhomogeneous broadening relative to GalnNAs. We speculate that Sb brings benefits as a surfactant producing more homogeneous wells so Sb may also be beneficial in structures at shorter wavelength. However, there is a large non radiative current in GalnNAsSb and achieving further reductions in the non-radiative current is the major challenge in taking advantage of the good gain potential of this system.
Keywords :
III-V semiconductors; absorption coefficients; arsenic compounds; conduction bands; electronic density of states; gallium arsenide; indium compounds; infrared spectra; optical materials; semiconductor quantum wells; spectral line broadening; spontaneous emission; surfactants; valence bands; visible spectra; wide band gap semiconductors; GaInAs; GaInNAs; GaInNAsSb; absorption spectra; conduction band; homogeneous wells; inhomogeneous broadening; nonradiative current; operating wavelength; optical gain; overlap integral; photon energy; quantum wells; radiative recombination current; reduced density of states; spontaneous emission spectra; structural properties; valence band; Absorption; Current density; Gain measurement; Optical waveguides; Spontaneous emission; Dilute nitrides; optical gain; quantum well lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2011.2129492
Filename :
5767798
Link To Document :
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