Title :
High-power operation in 0.98- mu m strained-layer InGaAs-GaAs single-quantum-well ridge waveguide lasers
Author :
Takeshita, Tatsuya ; Okayasu, Masanobu ; Uehara, Shingo
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa, Japan
Abstract :
High power strained-layer InGaAs-GaAs graded-index separate confinement heterostructure (GRIN-SCH) single-quantum-well (SQW) lasers at an emission wavelength of 0.98 mu m have been fabricated. A light power as high as 270 mW and a maximum front power conversion efficiency of 51.5% have been obtained for the antireflective and highly-reflective coated laser with 9- mu m-wide ridge and 600- mu m-long cavity.<>
Keywords :
III-V semiconductors; gallium arsenide; gradient index optics; indium compounds; optical waveguides; semiconductor junction lasers; 0.98 micron; 270 mW; 51.5 percent; 600 micron; 9 micron; IR laser sources; InGaAs-GaAs; antireflective coated lasers; emission wavelength; graded-index; highly-reflective coated laser; light power; maximum front power conversion efficiency; ridge waveguide lasers; separate confinement heterostructure; single-quantum-well; strained-layer; Fiber lasers; Laser noise; Optical fiber communication; Optical fiber networks; Optical waveguides; Power conversion; Power lasers; Pump lasers; Quantum well lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
