DocumentCode :
1517586
Title :
Submilliampere-threshold 1.5- mu m strained-layer multiple quantum well lasers
Author :
Zah, C.E. ; Favire, F.J. ; Bhat, R. ; Menocal, S.G. ; Andreadakis, N.C. ; Hwang, D.M. ; Koza, M. ; Lee, T.P.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Volume :
2
Issue :
12
fYear :
1990
Firstpage :
852
Lastpage :
853
Abstract :
The effect of high-reflection facet coatings on strained-layer multiple-quantum-well lasers was studied and submilliampere-threshold lasers were made in the 1.5- mu m wavelength region with a short cavity and high-reflection-coated facets. As a result of the compressive strain, the threshold current density is loss-limited instead of transparency-limited. By the use of the step-graded-index separate confinement heterostructure to reduce the waveguide loss, a threshold current density of 550 A/cm/sup 2/ was measured on 30- mu m wide broad area lasers with 1-mm long cavity.<>
Keywords :
antireflection coatings; coatings; laser cavity resonators; optical films; optical losses; semiconductor junction lasers; 1 mm; 1.5 micron; 30 micron; broad area lasers; compressive strain; high-reflection facet coatings; loss-limited; short cavity; step-graded-index separate confinement heterostructure; strained-layer multiple quantum well lasers; submilliampere-threshold lasers; threshold current density; waveguide loss; Capacitive sensors; Coatings; Optical losses; Optical waveguides; Power lasers; Quantum well devices; Quantum well lasers; Strain measurement; Threshold current; Waveguide lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.62007
Filename :
62007
Link To Document :
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