Compact high-current diode laser nanosecond-pulse source with high efficiency and 13 µJ output energy

Author

Hoffmann, T. ; Klehr, Andreas ; Liero, A. ; Erbert, Gotz ; Heinrich, Wolfgang

Author_Institution

Leibniz-Inst. fur Hochstfrequenztechnik im Forschungsverbund Berlin e.V., Ferdinand-Braun-Inst., Berlin, Germany

Volume

51

Issue

1

fYear

2015

fDate

1 8 2015

Firstpage

83

Lastpage

85

Abstract

A compact gain-switched nanosecond diode laser pulse source at 920 nm with an output energy of 13 μJ is presented. The developed nanosecond electronic driver is based on GaN transistors and controlled by transistor-transistor logic compatible input pulses. A peak current of more than 430 A for 20-50 ns-long pulses with a repetition rate up to 100 kHz and an electrical efficiency of more than 50% is reached. About 50 ns optical pulses with a peak power of 250 W (13 μJ) are generated with a tapered ridge waveguide bar with 29 emitters. The rise and fall time of the pulses is about 13 ns.

Keywords

III-V semiconductors; driver circuits; field effect transistors; gallium compounds; optical switches; ridge waveguides; semiconductor lasers; wide band gap semiconductors; GaN; GaN transistors; compact high-current diode laser; electrical efficiency; electronic driver; energy 13 muJ; high efficiency; nanosecond-pulse source; output energy; peak current; tapered ridge waveguide bar; time 20 ns to 50 ns; transistor-transistor logic compatible input pulses; wavelength 920 nm;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.3204

Filename

7006856