DocumentCode :
15176
Title :
Compact high-current diode laser nanosecond-pulse source with high efficiency and 13 µJ output energy
Author :
Hoffmann, T. ; Klehr, Andreas ; Liero, A. ; Erbert, Gotz ; Heinrich, Wolfgang
Author_Institution :
Leibniz-Inst. fur Hochstfrequenztechnik im Forschungsverbund Berlin e.V., Ferdinand-Braun-Inst., Berlin, Germany
Volume :
51
Issue :
1
fYear :
2015
fDate :
1 8 2015
Firstpage :
83
Lastpage :
85
Abstract :
A compact gain-switched nanosecond diode laser pulse source at 920 nm with an output energy of 13 μJ is presented. The developed nanosecond electronic driver is based on GaN transistors and controlled by transistor-transistor logic compatible input pulses. A peak current of more than 430 A for 20-50 ns-long pulses with a repetition rate up to 100 kHz and an electrical efficiency of more than 50% is reached. About 50 ns optical pulses with a peak power of 250 W (13 μJ) are generated with a tapered ridge waveguide bar with 29 emitters. The rise and fall time of the pulses is about 13 ns.
Keywords :
III-V semiconductors; driver circuits; field effect transistors; gallium compounds; optical switches; ridge waveguides; semiconductor lasers; wide band gap semiconductors; GaN; GaN transistors; compact high-current diode laser; electrical efficiency; electronic driver; energy 13 muJ; high efficiency; nanosecond-pulse source; output energy; peak current; tapered ridge waveguide bar; time 20 ns to 50 ns; transistor-transistor logic compatible input pulses; wavelength 920 nm;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2014.3204
Filename :
7006856
Link To Document :
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