Title :
GaAs MESFETs with nonalloyed ohmic contacts: technology and performance
Author :
Paccagnella, Alessandro ; Canali, Carlo ; Donzelli, G. ; Zanoni, Enrico ; Wang, L.C. ; Lau, S.S.
Author_Institution :
Dipartimento di Ingegneria, Trento Univ.
fDate :
5/26/1988 12:00:00 AM
Abstract :
GaAs MESFETs with nonalloyed ohmic contacts, achieved through a solid phase reaction of a Ge/Pd/GaAs (x.t.l.) structure, have been realised and tested at DC and RF. Their contact resistivity and electrical performances are better than those of similar devices with conventional AuGeNi ohmic contacts
Keywords :
III-V semiconductors; Schottky gate field effect transistors; annealing; gallium arsenide; germanium; ohmic contacts; palladium; semiconductor-metal boundaries; DC characteristics; Ge-Pd-GaAs; III-V semiconductors; MESFETs; PdGe; RF characteristics; annealing; contact resistivity; electrical performances; nonalloyed ohmic contacts; solid phase reaction;
Journal_Title :
Electronics Letters
