Title :
Microwave transformers, inductors and transmission lines implemented in an Si/SiGe HBT process
Author :
Laney, David C. ; Larson, Lawrence E. ; Chan, Paul ; Malinowski, John ; Harame, David ; Subbanna, Seshu ; Volant, Rich ; Case, Michael
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
fDate :
8/1/2001 12:00:00 AM
Abstract :
Experimental results are presented on microwave inductors, transformers, and transmission lines fabricated in an Si/SiGe heterojunction-bipolar-transistor process with standard metallization and a thick polyimide dielectric. Microstrip transmission lines with characteristic impedances from 44 to 73 Ω, Q´s from 10 to 14, and insertion losses from 0.11 to 0.16 dB/mm at 10 GHz are presented. Conventional planar inductors with inductances from 0.5 to 15 nH and with peak Q´s up to 22 are presented. Lateral transformers with a maximum available gain of better than -5 dB and a measured coupling coefficient (k) of 0.6 at 5.5 GHz and 0.4 up to 12.5 GHz are also discussed
Keywords :
Q-factor; elemental semiconductors; heterojunction bipolar transistors; high-frequency transformers; high-frequency transmission lines; inductors; microwave bipolar transistors; semiconductor materials; silicon; silicon compounds; -5 dB; 10 GHz; 5.5 to 12.5 GHz; Q-factor; Si-SiGe; Si/SiGe heterojunction bipolar transistor; characteristic impedance; coupling coefficient; gain; insertion loss; lateral transformer; metallization; microwave inductor; microwave transformer; microwave transmission line; planar inductor; polyimide dielectric; Dielectrics; Germanium silicon alloys; Inductors; Metallization; Microstrip; Planar transmission lines; Polyimides; Silicon germanium; Transformers; Transmission lines;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
