• DocumentCode
    1517712
  • Title

    Mixed Field Dosimetry Using Semiconductor Dosimeters at an Extremely High Dose Area

  • Author

    Lee, Nam Ho ; Lee, Seung Min ; Youk, Geun Uck

  • Author_Institution
    Korea Atomic Energy Res. Inst., Daejeon, South Korea
  • Volume
    57
  • Issue
    3
  • fYear
    2010
  • fDate
    6/1/2010 12:00:00 AM
  • Firstpage
    1613
  • Lastpage
    1617
  • Abstract
    The goal of this research was to measure extremely high doses of ionizing and non-ionizing radiation separately near a commercial nuclear reactor. Specially designed p-MOSFETs were used for detecting ionizing radiation. Custom PIN diode dosimeters were developed in-house for measuring high dose of non-ionizing radiation. The two semiconductor dosimeters successfully measured ionizing and non-ionizing radiation separately in a mixed-field high-radiation environment. The neutron sensitivity of the developed dosimeter was 14.63 mV/cGy, or three times higher than that of the conventional ones. This paper describes the development, calibration, and application of the diode dosimeter.
  • Keywords
    MOSFET; calibration; dosimeters; dosimetry; p-i-n diodes; radiation monitoring; semiconductor counters; PIN diode dosimeters; calibration; commercial nuclear reactor; extremely high dose area; ionizing radiation; ionizing radiation detection; mixed field dosimetry; neutron sensitivity; nonionizing radiation; p-MOSFET; semiconductor dosimeters; Atomic measurements; Dosimetry; Inductors; Ionizing radiation; Lattices; MOSFETs; Neutrons; Radiation effects; Robots; Semiconductor diodes; Dosimetry; mixed-field; nuclear reactor; semiconductor;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2010.2046749
  • Filename
    5485120