A 59–66 GHz Highly Stable Millimeter Wave Amplifier in 130 nm CMOS Technology

Author

Fahimnia, Mehrdad ; Mohammad-Taheri, Mahmoud ; Wang, Ying ; Yu, Ming ; Safavi-Naeini, Safieddin

Author_Institution

Dept. of ECE, Univ. of Waterloo, Waterloo, ON, Canada

Volume

21

Issue

6

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

320

Lastpage

322

Abstract

The design and fabrication of four-stage cascaded mm-wave low noise amplifiers (LNAs) in a 130 nm CMOS technology are presented. The simultaneous high stability factor and low noise figure are obtained using proper inductors in both gate and source of the transistor. Measured gain of 14.7 dB with a 7 GHz bandwidth has been achieved. The larger inductors are realized with microstrip lines to improve the performance of the LNA and minimize the circuit size.

Keywords

CMOS integrated circuits; inductors; low noise amplifiers; microstrip lines; millimetre wave amplifiers; transistors; CMOS technology; cascaded millimeter-wave low noise amplifier; frequency 59 GHz to 66 GHz; inductor; low noise figure; microstrip line; size 130 nm; stability factor; transistor; CMOS integrated circuits; Circuit stability; Gain; Noise; Power system stability; Stability analysis; Transistors; CMOS; low noise amplifier (LNA); microstrip line; microwave/millimeter wave integrated circuit; stability;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2011.2141977

Filename

5768041