Title :
235 GHz Amplifier Using 150 nm InP HBT High Power Density Transistor
Author :
Radisic, Vesna ; Scott, Dennis ; Wang, Sujane ; Cavus, Abdullah ; Gutierrez-Aitken, Augusto ; Deal, William R.
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA, USA
fDate :
6/1/2011 12:00:00 AM
Abstract :
In this letter, a four-stage 235 GHz heterojunction bipolar transistor (HBT) amplifier is reported. Each stage uses a single-emitter 0.15 × 3 μm2 InP HBT with collector current density of 25 mA/μm2, maximum frequency of oscillation (fmax) greater than 500 GHz, and a cutoff frequency (fT) of 320 GHz. The MMIC amplifier is realized in inverted microstrip topology. The amplifier demonstrates measured small signal gain of 12.7 dB and output power of 2.6 mW with a power gain of 9.4 dB. This corresponds to transistor output power density of 5.7 mW/μm2 at 235 GHz. This is the highest HBT transistor output power density published to date at frequencies above 170 GHz, which indicates high power InP HBT power amplifiers should be viable with on-chip power combining.
Keywords :
MMIC power amplifiers; heterojunction bipolar transistors; millimetre wave power amplifiers; power transistors; HBT power amplifier; HBT transistor output power density; MMIC amplifier; collector current density; cutoff frequency; frequency 235 GHz; frequency 320 GHz; gain 12.7 dB; heterojunction bipolar transistor amplifier; high power density transistor; inverted microstrip topology; on-chip power combining; oscillation maximum frequency; power 2.6 mW; signal gain; size 150 nm; Gain; Heterojunction bipolar transistors; Indium phosphide; MMICs; Power amplifiers; Power generation; Amplifier; MM-Wave; MMIC; heterojunction bipolar transistor (HBT); sub-millimeter wave;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2011.2139196
