Title :
Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs
Author :
Kim, Jin Ju ; Cho, Moonju ; Pantisano, Luigi ; Jung, Ukjin ; Lee, Young Gon ; Chiarella, Thomas ; Togo, Mitsuhiro ; Horiguchi, Naoto ; Groeseneken, Guido ; Lee, Byoung Hun
Author_Institution :
Dept. of Nanobio Mater. & Electron., Gwangju Inst. of Sci. & Technol. (GIST), Gwangju, South Korea
fDate :
7/1/2012 12:00:00 AM
Abstract :
A study of the negative and positive bias temperature instability (N/PBTI) reliability of FinFETs with different TiN metal gates deposited by either atomic layer deposition (ALD) or physical vapor deposition (PVD) on HfO2 dielectrics found that the nonuniformity of the interfacial oxide layer is closely related to reliability characteristics. FinFETs with an ALD TiN gate exhibit better NBTI and PBTI lifetimes than those with a PVD TiN gate. In addition, the dependence of fin width on NBTI reliability appeared to be worse with narrower fins, whereas PBTI reliability improves.
Keywords :
MOSFET; atomic layer deposition; dielectric materials; semiconductor device reliability; titanium compounds; ALD gate; NBTI reliability; PBTI reliability; PVD gate; TiN-HfO2; atomic layer deposition; dielectrics; gate FinFET; interfacial oxide layer nonuniformity; metal gates; negative-positive bias temperature instability reliability; physical vapor deposition; process-dependent N-PBTI characteristics; Dielectrics; Electrodes; FinFETs; Logic gates; Reliability; Tin; Atomic layer deposition (ALD); FinFET; TiN metal gate; negative bias temperature instability (NBTI); physical vapor deposition (PVD); positive bias temperature instability (PBTI);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2193868
