Title :
Transient simulation of millimeter-wave circuits incorporating numerical device modeling
Author :
Tait, Gregory B. ; Jones, Stephen H.
Author_Institution :
Dept. of Electr. Eng., Virginia Commonwealth Univ., Richmond, VA, USA
fDate :
6/1/1999 12:00:00 AM
Abstract :
A fast convolution-based computational approach is employed to integrate numerical solid-state device simulation with nonlinear millimeter-wave circuit simulation. Unlike previous combined harmonic-balance/device approaches, the high-frequency circuit/physical device response is allowed to evolve in time to its natural steady-state mode of operation, permitting insight into harmonic and parametric energy exchange, stability, load pulling, and frequency tuning effects. To demonstrate this computationally efficient approach, a second-harmonic 150-GHz transferred electron oscillator is simulated using both conventional Gunn and novel stable-depletion-layer InP devices. The integrated device/circuit simulations in the time domain enable us to investigate the formation and buildup of the oscillation modes in detail
Keywords :
Gunn oscillators; circuit simulation; convolution; millimetre wave circuits; millimetre wave oscillators; semiconductor device models; transient analysis; 150 GHz; Gunn device; InP; convolution; high-frequency circuit; nonlinear millimeter-wave circuit; numerical model; second-harmonic transferred electron oscillator; solid-state device; stable-depletion-layer device; time domain analysis; transient simulation; Circuit simulation; Circuit stability; Computational modeling; Energy exchange; Frequency; Millimeter wave circuits; Numerical simulation; Solid modeling; Solid state circuits; Steady-state;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
