DocumentCode :
1517837
Title :
Light Emitting and Laser Diodes in the Ultraviolet
Author :
Parbrook, Peter James ; Wang, Tao
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
Volume :
17
Issue :
5
fYear :
2011
Firstpage :
1402
Lastpage :
1411
Abstract :
The production of ultraviolet light emitting and laser diodes depends critically on the reduction of defects in the material, particularly threading dislocations. Methods to reduce the defect density using planar substrates, and no ex situ patterning are reported and their potential discussed.
Keywords :
dislocations; integrated optics; light emitting diodes; semiconductor lasers; defect density; defect reduction; laser diodes; planar substrates; threading dislocations; ultraviolet light emitting diodes; Absorption; Aluminum gallium nitride; Epitaxial growth; Gallium nitride; Light emitting diodes; Substrates; X-ray scattering; Dislocations; laser; light emitting diode; metalorganic vapor phase epitaxy;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2011.2126563
Filename :
5768058
Link To Document :
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