DocumentCode :
1517860
Title :
Millimeter-wave pulsed oscillator global modeling by means of electromagnetic, thermal, electrical, and carrier transport physical coupled models
Author :
Beaussart, Stéephane ; Perrin, Oliver ; Friscourt, Marie-Renée ; Dalle, Christophe
Author_Institution :
MA-COM Inc., Lowell, MA, USA
Volume :
47
Issue :
6
fYear :
1999
fDate :
6/1/1999 12:00:00 AM
Firstpage :
929
Lastpage :
934
Abstract :
The time domain modeling of the operation of a 94-GHz pulsed silicon IMPATT oscillator, based on a physical approach, is described in this paper. It relies on the coupling of electrical, thermal, electromagnetic, and carrier transport physical models. The model has been used to study the high-power stable operation of a 94-GHz oscillator. The results of a comparison between simulations, using two different types of passive radio-frequency load circuits, including experimental measurements, are presented and discussed. They tend to demonstrate that it is now possible to develop accurate millimeterwave-circuit predictive models even for application based on a nonlinear thermal and electrical transient operation such as IMPATT oscillators
Keywords :
IMPATT oscillators; circuit stability; millimetre wave oscillators; time-domain analysis; transient analysis; 94 GHz; IMPATT oscillator; carrier transport; global modeling; high-power stable operation; millimeter wave-circuit predictive models; millimeter-wave pulsed oscillator; nonlinear electrical transient operation; nonlinear thermal transient operation; passive radio-frequency load circuits; physical coupled models; time domain modeling; Circuits; EMP radiation effects; Electromagnetic coupling; Electromagnetic modeling; Electrothermal effects; Millimeter wave technology; Oscillators; Radio frequency; Semiconductor diodes; Time domain analysis;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.769328
Filename :
769328
Link To Document :
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