DocumentCode :
1518008
Title :
Lateral-Current-Injection Distributed Feedback Laser With Surface Grating Structure
Author :
Shindo, Takahiko ; Okumura, Tadashi ; Ito, Hitomi ; Koguchi, Takayuki ; Takahashi, Daisuke ; Atsumi, Yuki ; Kang, Joonhyun ; Osabe, Ryo ; Amemiya, Tomohiro ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Volume :
17
Issue :
5
fYear :
2011
Firstpage :
1175
Lastpage :
1182
Abstract :
As a step toward the realization of injection-type membrane distributed feedback (DFB) lasers, which are expected to be important components of optical interconnections, we realized lateral-current-injection DFB (LCI-DFB) lasers with surface grating structures prepared on semiinsulating InP substrates. First, we designed the surface grating structure to have a high index-coupling coefficient together with a high optical confinement in the quantum wells. Then, we investigated the surface grating structure formed on an amorphous-Si (a-Si) layer deposited on the GaInAsP/InP initial wafer containing five quantum wells. A moderately low threshold current of 7.0 mA and a high differential quantum efficiency of 43% from the front facet were obtained under a continuous-wave operating condition at room temperature for a uniform grating LCI-DFB laser with a stripe width of 2.0 μm and a cavity length of 300 μm. A threshold current of 5.8 mA was obtained with a λ/4 phase-shifted LCI-DFB laser with a-Si surface grating. Furthermore, a small-signal modulation bandwidth of 4.8 GHz was obtained at a bias current of 30 mA with a modulation current efficiency factor of 1.0 GHz/mA1/2.
Keywords :
III-V semiconductors; amorphous semiconductors; diffraction gratings; distributed feedback lasers; elemental semiconductors; gallium arsenide; indium compounds; integrated optics; laser cavity resonators; optical modulation; quantum well lasers; silicon; DFB lasers; GaInAsP-InP; InP; Si; amorphous layer; bandwidth 4.8 GHz; cavity length; continuous-wave operation; current 30 mA; current 5.8 mA; current 7.0 mA; differential quantum efficiency; index-coupling coefficient; injection-type membrane distributed feedback lasers; lateral-current-injection distributed feedback laser; modulation current efficiency factor; optical confinement; optical interconnections; phase-shifted laser; quantum wells; semiinsulating substrates; size 2.0 mum; size 300 mum; small-signal modulation bandwidth; surface grating structure; threshold current; uniform grating laser; Gratings; Optical refraction; Optical variables control; Surface emitting lasers; Surface treatment; Lateral-current-injection (LCI); membrane laser; organometallic vapor phase epitaxy (OMVPE) regrowth;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2011.2131636
Filename :
5768086
Link To Document :
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