Title :
Characteristics of a Fabricated PIN Photodiode for a Matching With a CsI(Tl) Scintillator
Author :
Kim, Han Soo ; Park, Se Hwan ; Ha, Jang Ho ; Lee, Dong-Hoon ; Cho, Seung Yeon
Author_Institution :
Korea Atomic Energy Res. Inst., Daejeon, South Korea
fDate :
6/1/2010 12:00:00 AM
Abstract :
Recently a PIN photodiode is more widely used than a conventional PMT, because it requires less bias to operate it and it is very compact. A PIN photodiode was designed and fabricated for a matching with a CsI(Tl) scintillator in consideration of low leakage current and high biasing voltage. Leakage current and spectral response were measured with the fabricated PIN photodiode as preliminary tests. A CsI(Tl)/PIN photodiode radiation detector was also fabricated and about 10.4% FWHM was achieved at 662 keV gamma-ray. In this study, characteristics of a fabricated PIN photodiode and a CsI(Tl)/PIN photodiode radiation detector were presented. Several important aspects to consider in the fabrication of a Si PIN photodiode radiation detector are also addressed.
Keywords :
caesium compounds; leakage currents; p-i-n diodes; photodiodes; solid scintillation detectors; CsI(Tl) scintillator; CsI:Tl; PIN photodiode design; PIN photodiode fabrication; electron volt energy 662 keV; high biasing voltage; low leakage current; spectral response; Avalanche photodiodes; Current measurement; Electrodes; Fabrication; Leak detection; Leakage current; PIN photodiodes; Protection; Radiation detectors; Voltage; CsI(Tl)/PIN-type; PIN photodiode; edge protection; gamma-ray; leakage current; spectral response;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2046334
