Molecular beam epitaxy-grown PbSnTe-PbEuSeTe buried heterostructure diode lasers

Author

Feit, Z. ; Kostyk, D. ; Woods, R.J. ; Mak, Pui-In

Author_Institution

Laser Photonics Anal. Div., Bedford, MA, USA

Volume

2

Issue

12

fYear

1990

Firstpage

860

Lastpage

862

Abstract

Buried heterostructure (BH) PbSnTe-PbEuSeTe lasers with a PbSnTe active layer were fabricated for the first time using a two-stage molecular beam epitaxy (MBE) growth procedure. Lasers with 4- mu m-wide and 0.65- mu m-thick buried Pb/sub 0.961/Sn/sub Sn0.039/Te active layer and Pb/sub 0.985/Eu/sub 0.015/Se/sub 0.02/Te/sub 0.98/ cladding layers were grown. Continuous wave (CW) operating temperature of 175 K was measured with CW threshold currents of 1.6 mA (20 K), 13.6 mA (80 K), and 195 mA (160 K). Single-mode operation with 3.0-cm/sup -1/-mode tuning was measured at 1639.8 cm/sup -1/ emission.<>

Keywords

II-VI semiconductors; europium compounds; laser modes; lead compounds; molecular beam epitaxial growth; optical workshop techniques; semiconductor junction lasers; tin compounds; 0.65 micron; 1.6 mA; 13.6 mA; 175 K; 195 mA; 4 micron; PbSnTe-PbEuSeTe lasers; active layer; buried heterostructure diode lasers; cladding layers; laser CW operating temperature; single node lasing; two-stage molecular beam epitaxy; Atmospheric measurements; Current measurement; Diode lasers; Lattices; Lead; Molecular beam epitaxial growth; Pollution measurement; Spectroscopy; Temperature; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.62010

Filename

62010