DocumentCode :
1518314
Title :
Optimization of overhanging-metal microstrip detectors: test and simulation
Author :
Passeri, Daniele ; Ciampolini, Paolo ; Bilei, Gian Mario ; Angarano, Matteo M. ; Moscatelli, Francesco
Author_Institution :
Dipt. di Ingegneri Elettronica e dell´´Inf., Perugia Univ., Italy
Volume :
48
Issue :
3
fYear :
2001
fDate :
6/1/2001 12:00:00 AM
Firstpage :
249
Lastpage :
253
Abstract :
The adoption of overhanging-metal contacts has been suggested as an effective means to limit breakdown risks in heavy-damaged high-voltage biased microstrip detectors. In this paper, the influence of the overhang on device noise parameters is analyzed, with particular reference to the interstrip capacitance. Data have been collected on a set of detectors featuring variable overhang extensions and different width/pitch ratios, and numerical simulation has been exploited to provide physical interpretation of the experimental findings. In particular, the nontrivial dependence of interstrip capacitance over geometrical parameters is discussed. By looking at leakage currents and charge collection as well, it is shown that limited-extension overhangs still have highly beneficial effects on the breakdown properties while having no practical drawbacks on the detector performance
Keywords :
capacitance; leakage currents; optimisation; semiconductor device noise; silicon radiation detectors; Si; Si microstrip detector; charge collection; interstrip capacitance; leakage current; noise; overhanging-metal contacts; overhanging-metal microstrip detectors; width/pitch ratios; Breakdown voltage; Capacitance; Detectors; Electric breakdown; Microstrip components; Mutual coupling; Numerical simulation; Silicon; Strips; Testing;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.940059
Filename :
940059
Link To Document :
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