DocumentCode :
1518405
Title :
Pressure dependence of secondary NIR scintillation in Ar and Ar/CF 4
Author :
Fraga, M.M.R. ; Bueno, C.C. ; Gonçalves, J. A C ; Fraga, F.A.F. ; Marques, R. Ferreira ; Policarpo, A.J.P.L.
Author_Institution :
Dept. de Fisica, Coimbra Univ., Portugal
Volume :
48
Issue :
3
fYear :
2001
fDate :
6/1/2001 12:00:00 AM
Firstpage :
330
Lastpage :
335
Abstract :
The variation with charge gain of the total number of photons emitted per electron, in the visible and near-infrared (NIR) regions (400<λ<1000 mm), in Ar/CF4, mixtures, is investigated for CF4 concentrations below 15%. Measurements were performed in a uniform field configuration and results are presented for charge gains below 100, under X-ray excitation. The maximum number of photons emitted per drifting electron (0.7 and 0.2 ph/e- for Ar+ 2% CF4 and Ar+10% CF4, respectively) is obtained for a charge gain G~4. The spectral distribution of the emitted light in Ar/CF4 mixtures is also analyzed. The pressure dependence (1-4 atm) of the secondary light output, in the visible and near infrared regions is studied as a function of the reduced electric field E/P for pure argon and Ar/CF4 mixtures. Above the charge multiplication threshold, the maximum number of photons emitted per electron decreases by a factor of about 1.5 when the pressure increases from 1 to 2 atms
Keywords :
argon; gas scintillation detectors; photoluminescence; pressure; scintillation; Ar/tetrafluoromethane mixture; charge gain; charge multiplication threshold; electric field; near-IR region; pressure; spectral distribution; visible region; Argon; Atomic measurements; Charge coupled devices; Charge measurement; Current measurement; Electron emission; Gain measurement; Instruments; Physics; Solid scintillation detectors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.940075
Filename :
940075
Link To Document :
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