Detectors for high-resolution gamma-ray imaging based on a single CsI(Tl) scintillator coupled to an array of silicon drift detectors

Author

Fiorini, C. ; Longoni, A. ; Perotri, F. ; Labanti, C. ; Rossi, E. ; Lechner, P. ; Strüder, L.

Author_Institution

Dipt. di Ingegneria Nucl., Politecnico di Milano, Italy

Volume

48

Issue

3

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

346

Lastpage

350

Abstract

Silicon drift detectors (SDDs) coupled to scintillators have been recently employed successfully in gamma-ray detection. The low value of output capacitance of an SDD allows to reach a lower electronics noise with respect to a conventional silicon photodiode. Detectors based on array of SDDs are of particular interest for gamma-ray imaging. A first prototype conceived for high-resolution imaging is based on a monolithic array of small SDDs (5 mm² each unit) with on-chip junction field-effect transistor (JFET). The first results obtained with a seven-elements array are here reported. For the realization of gamma detectors of larger active areas based on assembled units; SDDs of 30 mm ² of area with external JFET have been produced. We present the experimental results obtained in the characterization of a single CsI(Tl)-SDD unit

Keywords

caesium compounds; gamma-ray detection; junction gate field effect transistors; nuclear electronics; photodiodes; silicon radiation detectors; solid scintillation detectors; thallium; CsI:Tl; JFET; Si; Si drift detectors array; gamma-ray detection; high-resolution gamma-ray imaging detectors; on-chip junction field-effect transistor; photodiode; single CsI(Tl) scintillator; Capacitance; FETs; Gamma ray detection; Gamma ray detectors; High-resolution imaging; Nuclear imaging; Photodiodes; Prototypes; Sensor arrays; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.940078

Filename

940078