Title :
Operation of integrated InGaAsP-InP optical amplifier-monitoring detector with feedback control circuit
Author :
Liou, K.Y. ; Koren, U. ; Burrows, E.C. ; Oron, M. ; Miller, B.I. ; Young, M. ; Raybon, G. ; Burrus, C.A.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
Monolithic integration of a monitoring detector with an optical amplifier simplifies the use of an amplifier in lightwave systems. The structure and performance are described of a monolithically integrated semiconductor optical amplifier with low-loss Y-branching waveguides and a monitoring p-i-n detector. The photocurrent of the integrated detector can be used as a single control parameter for amplifier output leveling, gain optimization, and in situ monitoring of facet antireflective coatings.<>
Keywords :
III-V semiconductors; feedback; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical communication equipment; photodetectors; semiconductor junction lasers; InGaAsP-InP; amplifier output leveling; facet antireflective coatings; feedback control circuit; gain optimization; in situ monitoring; integrated InGaAsP-InP optical amplifier-monitoring detector; lightwave systems; low-loss Y-branching waveguides; monitoring p-i-n detector; monolithic integration; monolithically integrated semiconductor optical amplifier; photocurrent; Face detection; Integrated optics; Monitoring; Monolithic integrated circuits; Operational amplifiers; Optical amplifiers; Optical detectors; Optical waveguides; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
