Title :
Radiation hardness of VA1 with submicron process technology
Author :
Yokoyama, M. ; Aihara, H. ; Hazumi, M. ; Ishino, H. ; Kaneko, J. ; Li, Y. ; Marlow, D. ; Mikkelsen, S. ; Nygård, E. ; Tajima, H. ; Talebi, J. ; Verner, G. ; Yamamoto, H.
Author_Institution :
Dept. of Phys., Tokyo Univ., Japan
fDate :
6/1/2001 12:00:00 AM
Abstract :
We have studied the radiation hardness of the VA1, a Viking-architecture preamplifier VLSI chip. Large-scale integrated (LSI) samples are fabricated in 0.8 and 0.35 μm process technologies to improve the radiation hardness of the LSI for the Belle silicon vertex detector upgrade. We have observed significant improvement of the radiation hardness with 0.8-μm technology compared to 1.2-μm technology. Little degradation of noise and gain is observed up to a total dose of 20 Mrd for the VA1 fabricated in the 0.35-μm technology. We find that the radiation hardness improves with a scaling of better than tox-6 (tox: oxide thickness). Basic parameters of MOSFETs are also studied to understand the mechanism of radiation damage in the VA1
Keywords :
MOS analogue integrated circuits; VLSI; nuclear electronics; preamplifiers; radiation hardening (electronics); silicon radiation detectors; Belle silicon vertex detector upgrade; MOSFETs; Si; VA1 Viking-architecture preamplifier VLSI chip; large-scale integrated samples; radiation damage; submicron process technology; Degradation; Electron traps; Large scale integration; MOSFETs; Physics; Radiation detector circuits; Radiation detectors; Radiation effects; Silicon radiation detectors; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
