Title :
Decomposition of On-Current Variability of nMOS FinFETs for Prediction Beyond 20 nm
Author :
Matsukawa, T. ; Liu, Yanbing ; O´Uchi, Shin-Ichi ; Endo, Kazuhiko ; Tsukada, Junichi ; Yamauchi, Hiromi ; Ishikawa, Yuki ; Ota, Hiroyuki ; Migita, Shinji ; Morita, Yukinori ; Mizubayashi, Wataru ; Sakamoto, Kunihiro ; Masahara, Meishoku
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
ON-current (Ion) variability is comprehensively investigated for fin-shaped FETs (FinFETs) by measurement-based analysis. Variation sources of Ion are successfully extracted as independent contributions of threshold voltage Vt, transconductance Gm, and parasitic resistance Rpara. As well as Vt variability, Gm variation exhibits a linear relationship in the Pelgrom plot. However, the Gm variation is not reduced with scaling the gate dielectric thickness unlike the Vt variation. Perspective for 14-nm FinFETs represents that the Gm variation will be the dominant Ion variation source. A solution to reduce the Gm variation for the FinFET is also proposed.
Keywords :
MOSFET; measurement systems; Pelgrom plot; dominant variation source; fin-shaped FET; gate dielectric thickness; linear relationship; measurement-based analysis; nMOS FinFET; on-current variability decomposition; parasitic resistance; size 14 nm; threshold voltage; transconductance; Correlation; Dielectrics; FinFETs; Fluctuations; Logic gates; Resistance; Statistical distributions; Fin-shaped field-effect transistor (FinFET); mobility; on-current; parasitic resistance; scaling; transconductance; variability;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2196766
