• DocumentCode
    1518644
  • Title

    Driving spectral resolution to the noise limit in semiconductor gamma detector arrays

  • Author

    Lachish, Uri

  • Author_Institution
    Guma Sci., Rehovot, Israel
  • Volume
    48
  • Issue
    3
  • fYear
    2001
  • fDate
    6/1/2001 12:00:00 AM
  • Firstpage
    520
  • Lastpage
    523
  • Abstract
    Shape-time adjustment of a standard detector circuit improves the resolution of a single pixel of a detector array to the noise limit. The steady flow of gamma generated charge, in a detector bulk, induces fast signal build-up, as the charge arrives near a single pixel. The build-up period is shorter than the electron transition time from contact to contact. The circuit shape-time response is adjusted to overlap with the fast build-up period. The shape time determines a distance range, extending from the negative contact, where the detector signal does not depend on the position of photon absorption. The noise limited line width is consistent with published data of higher line resolution than predicted by the small pixel theory
  • Keywords
    gamma-ray detection; semiconductor counters; semiconductor device models; semiconductor device noise; noise limit; noise limited line width; semiconductor gamma detector arrays; shape time; spectral resolution; Circuit noise; Electrons; Gamma ray detection; Gamma ray detectors; Noise shaping; Semiconductor device noise; Sensor arrays; Shape; Signal generators; Signal resolution;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.940110
  • Filename
    940110