DocumentCode
1518644
Title
Driving spectral resolution to the noise limit in semiconductor gamma detector arrays
Author
Lachish, Uri
Author_Institution
Guma Sci., Rehovot, Israel
Volume
48
Issue
3
fYear
2001
fDate
6/1/2001 12:00:00 AM
Firstpage
520
Lastpage
523
Abstract
Shape-time adjustment of a standard detector circuit improves the resolution of a single pixel of a detector array to the noise limit. The steady flow of gamma generated charge, in a detector bulk, induces fast signal build-up, as the charge arrives near a single pixel. The build-up period is shorter than the electron transition time from contact to contact. The circuit shape-time response is adjusted to overlap with the fast build-up period. The shape time determines a distance range, extending from the negative contact, where the detector signal does not depend on the position of photon absorption. The noise limited line width is consistent with published data of higher line resolution than predicted by the small pixel theory
Keywords
gamma-ray detection; semiconductor counters; semiconductor device models; semiconductor device noise; noise limit; noise limited line width; semiconductor gamma detector arrays; shape time; spectral resolution; Circuit noise; Electrons; Gamma ray detection; Gamma ray detectors; Noise shaping; Semiconductor device noise; Sensor arrays; Shape; Signal generators; Signal resolution;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.940110
Filename
940110
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