Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes

Author

Shi, Min ; He, Jin ; Zhang, Lining ; Ma, Chenyue ; Zhou, Xingye ; Lou, Haijun ; Zhuang, Hao ; Wang, Ruonan ; Li, Yongliang ; Ma, Yong ; Wu, Wen ; Wang, Wenping ; Chan, Mansun

Author_Institution

Sch. of Electron. & Inf., Nantong Univ., Nantong, China

Volume

32

Issue

7

fYear

2011

fDate

7/1/2011 12:00:00 AM

Firstpage

955

Lastpage

957

Abstract

This letter describes the formation of one-time-programmable (OTP) memory using standard contact fuse and polysilicon diode in a standard CMOS technology. Programming of the contact fuse is achieved by applying a high current pulse to destroy the contact. Compared with other existing OTP technologies, the proposed approach has the advantage of zero additional mask, no additional processing step, compact structure, and low programming voltage. The described OTP has been demonstrated in a 0.18-μm CMOS technology from TSMC with a cell size of 2.33 μm² . The contact fuse can be programmed with a voltage of 3 V and a current of 2.4 mA.

Keywords

CMOS memory circuits; electric fuses; electrical contacts; masks; programmable circuits; semiconductor diodes; OTP technology; Si; TSMC; current 2.4 mA; one-time-programmable memory; polysilicon diode; size 0.18 mum; standard CMOS processes; voltage 3 V; zero-mask contact fuse; Arrays; CMOS integrated circuits; Electron devices; Fuses; Laboratories; Programming; Silicides; Contact fuse; memory; one-time programmable (OTP); standard CMOS;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2147754

Filename

5770175