DocumentCode :
1518693
Title :
Microthermal Stage for Electrothermal Characterization of Phase-Change Memory
Author :
Lee, Jaeho ; Kim, SangBum ; Jeyasingh, Rakesh ; Asheghi, Mehdi ; Wong, H. -S Philip ; Goodson, Kenneth E.
Author_Institution :
Dept. of Mech. Eng., Stanford Univ., Stanford, CA, USA
Volume :
32
Issue :
7
fYear :
2011
fDate :
7/1/2011 12:00:00 AM
Firstpage :
952
Lastpage :
954
Abstract :
This letter describes a novel experimental structure that captures the impact of rapid temperature transients and repetitive cycling on the thermal and electrical properties of Ge2 Sb2Te5 (GST). The microthermal stage dramatically improves the temporal resolution for heating and enables simultaneous thermal and electrical characterizations. Thermal conductivity measurements show phase transitions of GST accompanied by abrupt changes in electrical resistance. Repetitive cycling with durations down to 100 ns produces melt-quenched amorphous GST with the thermal conductivity 40% lower than that of crystalline GST. Recrystallization increases conductivity but not up to the value achieved by long-timescale bulk annealing. This is potentially because the rapidly recrystallized GST contains more disorder near the interface.
Keywords :
phase change memories; thermal conductivity; electrical resistance; electrothermal characterization; microthermal stage; phase-change memory; rapid temperature transients; repetitive cycling; thermal conductivity; Conductivity; Heating; Rapid thermal annealing; Resistance; Temperature measurement; Thermal conductivity; $hbox{Ge}_{2}hbox{Sb}_{2}hbox{Te}_{5}$ (GST); microthermal stage (MTS); phase-change memory (PCM); thermal conductivity;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2144952
Filename :
5770176
Link To Document :
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