Temperature Dependence of Electrical Characteristics of Strained nMOSFETs Using Stress Memorization Technique

Author

Huang, Po Chin ; Wu, San Lein ; Chang, Shoou Jinn ; Kuo, Cheng Wen ; Chang, Ching Yao ; Huang, Yao Tsung ; Cheng, Yao Chin ; Cheng, Osbert

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

32

Issue

7

fYear

2011

fDate

7/1/2011 12:00:00 AM

Firstpage

835

Lastpage

837

Abstract

The temperature dependence of the electrical characteristics of strained nMOSFETs combining stress memorization technique (SMT) process and contact etch-stop layer has been investigated. The observed higher mobility and lower gate tunneling current of SMT devices indicate higher tensile stress in the channel and prove the true transmission of SMT-process-induced stress from the deposited SiN layer. Moreover, as temperature is increased, SMT devices show less deteriorated mobility and increased gate tunneling current, which are due to decreased phonon scattering and increased tunneling barrier height, respectively.

Keywords

MOSFET; semiconductor materials; silicon compounds; tunnelling; SMT-process-induced stress; SiN; contact etch-stop layer; electrical characteristics; gate tunneling current; mobility enhancement; phonon scattering; strained nMOSFET; stress memorization technique; temperature dependence; tensile stress; tunneling barrier height; Logic gates; MOSFETs; Plasma temperature; Stress; Temperature; Temperature sensors; Tunneling; Strained nMOSFETs; stress memorization technique (SMT); temperature dependence;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2140350

Filename

5770179